savantic semiconductor product specification silicon npn power transistors 2SC792 description with to-3 package high breakdown voltage applications for voltage regulator,inverter,switching mode power supply applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a p c collector power dissipation t c =25? 50 w t j junction temperature 150 ? t stg storage temperature -55~150 ? fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SC792 characteristics tj=25? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 300 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =1.5a; i b =0.3a 5.0 v v besat base-emitter saturation voltage i c =1.5a; i b =0.3a 1.5 v i cbo collector cut-off current v cb =300v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe dc current gain i c =0.3a ; v ce =10v 30 200 f t transition frequency i c =0.1a ; v ce =10v 10 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SC792 package outline fig.2 outline dimensions (unindicated tolerance:0. 1mm) downloaded from: http:///
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